BC847AM,315 Datasheet

BC847,235

Datasheet specifications

Datasheet's name BC847,235
File size 48.536 KB
File type pdf
Number of pages 17

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Nexperia BC847AM,315
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 250mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 180@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@100mA,5mA
  • Package: DFN-3L(1x0.6)
  • Manufacturer: Nexperia

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